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Transistor AOT10N60, 0.6ohm, 600V, 7.2A, -55~150°C, 250W, TO220, ±30V

Name: Transistor AOT10N60, 0.6ohm, 600V, 7.2A, -55~150°C, 250W, TO220, ±30V
Brand: ALPHA AND OMEGA SEMICONDUCTOR
SKU: 12703
Price: 4.26 BGN
Availability: InStock
Rating: 4.0000 (1 reviews)

Transistor 10NK60C MOS-N-FET 600 V, 9.5 A, 0.73 Ohm, 50 W

Transistor AOT10N60 from type N-MOSFET with 600 V drain-to-ground breakthrough voltage, 7.2 A drain current and 30 V gate-to-source voltage.

Manufacturer:

ALPHA AND OMEGA SEMICONDUCTOR

Model:

AOT10N60

Weight:

0.005 Kgs

Availability

Available online

940 pcs.

On site in Vikiwat shop

the price on site may be different

7 pcs.

See quantities

-13%

online

BGN 4.26 VAT Incl.

~~BGN 4.90~~ VAT Incl.

The offer is valid from 31.03.2025 to 31.03.2025

Prices for quantities (VAT Incl.)

BGN 4.26

~~BGN 4.90~~

BGN 3.84

~~BGN 4.41~~

BGN 3.62

~~BGN 4.17~~

10+

BGN 3.41

~~BGN 3.92~~

25+

BGN 3.20

~~BGN 3.68~~

SKU: 12703

Specifications Files Reviews

Specifications

Technical parameters of Transistor AOT10N60, 0.6ohm, 600V, 7.2A, -55~150°C, 250W, TO220, ±30V

Brand:

ALPHA AND OMEGA SEMICONDUCTOR

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

7.2 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.6 [ohm]

Power Pd:

250 [W]

Housing:

TO220

Maximum voltage gate-source Ugs:

±30 [V]

Model:

AOT10N60

Mounting:

THT

Diode:

Files

Technical documentation of Transistor AOT10N60, 0.6ohm, 600V, 7.2A, -55~150°C, 250W, TO220, ±30V

Datasheet AOT10N60 (EN) PDF, 655.12 KB

Reviews

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