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Transistor 2SK787 MOS-N-FET 900 V, 8 A, 120 W, 1.2 Ohm

Transistor 2SK787 MOS-N-FET 900 V, 8 A, 120 W, 1.2 Ohm

Transistor 2SK787 MOS-N-FET 900 V, 8 A, 120 W, 1.2 Ohm

Model:

2SK787

Weight:

0.011 Kgs

Availability

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€ 2.71 / 5.30 лв

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SKU: 4982

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Specifications

Technical parameters of Transistor 2SK787 MOS-N-FET 900 V, 8 A, 120 W, 1.2 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

900 [V]

Maximum drain current:

8 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.2 [ohm]

Power Pd:

120 [W]

Housing:

TO-247

Maximum voltage gate-source Ugs:

±20 [V]

Model:

2SK787

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor 2SK787 MOS-N-FET 900 V, 8 A, 120 W, 1.2 Ohm

2SK787 PDF, 177.58 KB

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Transistor 2SK787 MOS-N-FET 900 V, 8 A, 120 W, 1.2 Ohm

SKU

4982

Model

2SK787

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