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Transistor AOT4N60, N-MOSFET, 2.2ohm, 600V, 2.7A, -55~150°C, 104W, TO220, ±30V

Transistor AOT4N60 N-MOSFET 2.2ohm 600V 2.5A 104W ±30V

Unipolar transistor AOT4N60, type N-MOSFET, 600 V drain-to-ground voltage, 2.7 A buckle current and ±30 V gate voltage.

Manufacturer:

ALPHA AND OMEGA SEMICONDUCTOR

Model:

AOT4N60

Weight:

0.003 Kgs

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for a total cart value over € 50

Availability

Delivery within 10 days

878 pcs.

On site in Vikiwat shop

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1 pcs.

Expected delivery of 21 pcs.

on sale after 30.04

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Possible speedy APS

€ 1.48 / 2.89 лв

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for a total cart value over € 50

SKU: 4988

Specifications Reviews

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Specifications

Technical parameters of Transistor AOT4N60, N-MOSFET, 2.2ohm, 600V, 2.7A, -55~150°C, 104W, TO220, ±30V

Brand:

ALPHA AND OMEGA SEMICONDUCTOR

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

2.7 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

2.2 [ohm]

Power Pd:

104 [W]

Housing:

TO220

Maximum voltage gate-source Ugs:

±30 [V]

Model:

AOT4N60

Mounting:

THT

Diode:

no

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Transistor AOT4N60, N-MOSFET, 2.2ohm, 600V, 2.7A, -55~150°C, 104W, TO220, ±30V

SKU

4988

Manufacturer / Model

ALPHA AND OMEGA SEMICONDUCTOR / AOT4N60

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