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Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220

Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220

Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220.

Manufacturer:

ON SEMICONDUCTOR

Model:

50N06 /FQP/

Weight:

0.003 Kgs

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Availability

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317 pcs.

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€ 2.06

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SKU: 13398

Specifications Files Reviews

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Specifications

Technical parameters of Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220

Brand:

ON SEMICONDUCTOR

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

60 [V]

Maximum drain current:

50 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.018 [ohm]

Power Pd:

131 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

50N06 /FQP/

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220

Technical data [EN] PDF, 375.54 KB

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Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220

SKU

13398

Manufacturer / Model

ON SEMICONDUCTOR / 50N06 /FQP/

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