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Transistor BUZ10 MOS-N-FET 50 V, 23 A, 75 W, 0.06 Ohm

Transistor BUZ10 MOS-N-FET 50 V, 23 A, 75 W, 0.06 Ohm

Transistor BUZ10 MOS-N-FET 50 V, 23 A, 75 W, 0.06 Ohm

Model:

BUZ10

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

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1 pcs.

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€ 2.59 / 5.07 лв

~~€ 2.88~~

The offer is valid from 26.05.2026 to 26.05.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4864

Specifications Files Reviews

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Specifications

Technical parameters of Transistor BUZ10 MOS-N-FET 50 V, 23 A, 75 W, 0.06 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

50 [V]

Maximum drain current:

23 [A]

Operating temperature:

-65~175 [°C]

Drain-source resistance at 25°С:

0.06 [ohm]

Power Pd:

75 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

BUZ10

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor BUZ10 MOS-N-FET 50 V, 23 A, 75 W, 0.06 Ohm

BUZ10 PDF, 81.59 KB

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Transistor BUZ10 MOS-N-FET 50 V, 23 A, 75 W, 0.06 Ohm

SKU

4864

Model

BUZ10

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