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Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

Manufacturer:

VISHAY

Model:

IRF9610

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

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91 pcs.

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€ 0.81 / 1.58 лв

~~€ 0.90~~

The offer is valid from 13.05.2026 to 13.05.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4956

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

Brand:

VISHAY

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

1.8 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

3 [ohm]

Power Pd:

20 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF9610

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

IRF9610PBF PDF, 142.63 KB

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Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

SKU

4956

Manufacturer / Model

VISHAY / IRF9610

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