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Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

Manufacturer:

VISHAY

Model:

IRF9610

Weight:

0.006 Kgs

Availability

Available online

94 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

BGN 1.76 VAT Incl.

Prices for quantities (VAT Incl.)

1+

BGN 1.76

3+

BGN 1.67

5+

BGN 1.58

10+

BGN 1.50

25+

BGN 1.41

SKU: 4956

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

Brand:

VISHAY

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

1.8 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

3 [ohm]

Power Pd:

20 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF9610

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF9610PBF MOS-P-FET 200 V, 1.8 A, 3 Ohm, 20 W

IRF9610PBF PDF, 142.63 KB

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