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Transistor IRF720PBF MOS-N-FET 400 V, 3.3 A, 1.8 Оhm, 50 W

Transistor IRF720PBF MOS-N-FET 400 V, 3.3 A, 1.8 Оhm, 50 W

Transistor IRF720PBF MOS-N-FET 400 V, 3.3 A, 1.8 Оhm, 50 W

Manufacturer:

VISHAY

Model:

IRF720

Weight:

0.002 Kgs

Availability

Available online

36 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

BGN 2.16 VAT Incl.

Prices for quantities (VAT Incl.)

1+

BGN 2.16

3+

BGN 2.04

5+

BGN 1.94

10+

BGN 1.83

25+

BGN 1.73

SKU: 4946

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF720PBF MOS-N-FET 400 V, 3.3 A, 1.8 Оhm, 50 W

Brand:

VISHAY

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

400 [V]

Maximum drain current:

2.1 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.8 [ohm]

Power Pd:

50 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF720

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF720PBF MOS-N-FET 400 V, 3.3 A, 1.8 Оhm, 50 W

IRF720PBF PDF, 163.3 KB

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