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Transistor IRF730 MOS-N-FET 400V, 5.5A, 1 ohm, 75W TO220

Transistor IRF730 MOS-N-FET 400 V, 5.5 A, 1 Оhm, 75 W TO220

Transistor IRF730 MOS-N-FET with drain-source voltage 400 V and power 75 W.

Model:

IRF730

Weight:

0.003 Kgs

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Availability

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56 pcs.

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€ 1.79 / 3.50 лв

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The offer is valid from 30.05.2026 to 30.05.2026

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SKU: 4947

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRF730 MOS-N-FET 400V, 5.5A, 1 ohm, 75W TO220

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

400 [V]

Maximum drain current:

7.2 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.7 [ohm]

Power Pd:

125 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF730

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF730 MOS-N-FET 400V, 5.5A, 1 ohm, 75W TO220

Technical data and drawing (EN) PDF, 271.55 KB

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Transistor IRF730 MOS-N-FET 400V, 5.5A, 1 ohm, 75W TO220

SKU

4947

Model

IRF730

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