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Transistor IRF9630, P-MOSFET, 0.5 Ohm, 200V, 6.5A, -55~150°C, 75W, TO-220AB, ±20V

Name: Transistor IRF9630, P-MOSFET, 0.5 Ohm, 200V, 6.5A, -55~150°C, 75W, TO-220AB, ±20V
SKU: 4891
Price: 1.50 BGN
Availability: OutOfStock
Rating: 4.0000 (1 reviews)

Transistor IRF9630 type P-MOSFET with drain-source voltage 200 V, drain current 6.5 A, dissipated power 75 W and housing TO-220AB.

Model:

IRF9630

Weight:

0.005 Kgs

Availability

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SKU: 4891

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF9630, P-MOSFET, 0.5 Ohm, 200V, 6.5A, -55~150°C, 75W, TO-220AB, ±20V

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

6.5 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.5 [ohm]

Power Pd:

75 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF9630

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF9630, P-MOSFET, 0.5 Ohm, 200V, 6.5A, -55~150°C, 75W, TO-220AB, ±20V

Datasheet (EN) PDF, 67.2 KB

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