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Transistor IXDH30N120D1, N-IGBT+D, 1200 V, 60 A, 300 W, TO247javascript: SC.ML.nextLanguage(1);AD

Transistor IXDH30N120D1, N-IGBT+D, 1200 V, 60 A, 300 W, TO247javascript: SC.ML.nextLanguage(1);AD

Transistor IXDH30N120D1, N-IGBT+D, 1200 V, 60 A, 300 W, TO247javascript: SC.ML.nextLanguage(1);AD

Manufacturer:

IXYS

Model:

IXDH30N120D1

Weight:

0.011 Kgs

Availability

Out of stock online

On site in Vikiwat shop

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out of stock

€ 14.83 / 29.00 лв

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SKU: 4927

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Specifications

Technical parameters of Transistor IXDH30N120D1, N-IGBT+D, 1200 V, 60 A, 300 W, TO247javascript: SC.ML.nextLanguage(1);AD

Brand:

IXYS

Transistor type:

N-IGBT

Maximum voltage collector-emitter Uceo:

1200 [V]

Maximum collector current Ic:

60 [A]

Power:

300 [W]

Housing:

TO-247AD

Diode:

yes

Mounting:

THT

Model:

IXDH30N120D1

Operating temperature:

-55~150 [°C]

Maximum collector current at 100°C:

38 [A]

Files

Technical documentation of Transistor IXDH30N120D1, N-IGBT+D, 1200 V, 60 A, 300 W, TO247javascript: SC.ML.nextLanguage(1);AD

IXDH30N120D1 data sheet PDF, 84.66 KB

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Transistor IXDH30N120D1, N-IGBT+D, 1200 V, 60 A, 300 W, TO247javascript: SC.ML.nextLanguage(1);AD

SKU

4927

Manufacturer / Model

IXYS / IXDH30N120D1

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