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Transistor KD367B, NPN, 100 V, 8 A, 60 W, 3 MHz, TO3

Transistor KD367B, NPN, 100 V, 8 A, 60 W, 3 MHz, TO3

Transistor KD367B, NPN, 100 V, 8 A, 60 W, 3 MHz, TO3.

Manufacturer:

TESLA

Model:

KD367B-100

Weight:

0.022 Kgs

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for a total cart value over € 50

Availability

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75 pcs.

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€ 0.81 / 1.58 лв

~~€ 1.08~~

The offer is valid from 19.04.2026 to 19.05.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 5607

Specifications Files Reviews

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Specifications

Technical parameters of Transistor KD367B, NPN, 100 V, 8 A, 60 W, 3 MHz, TO3

Brand:

TESLA

Transistor type:

NPN darlington

Maximum voltage collector-emitter Uceo:

100 [V]

Maximum collector current Ic:

8 [A]

Power Pc:

60 [W]

Housing:

TO-3

Mounting:

THT

Maximum voltage collector-base Ucbo:

100 [V]

Model:

KD367B-100

Maximum operating frequency:

7 [MHz]

Operating temperature:

-55~175 [°C]

Files

Technical documentation of Transistor KD367B, NPN, 100 V, 8 A, 60 W, 3 MHz, TO3

Technical data EN PDF, 1.87 MB

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Transistor KD367B, NPN, 100 V, 8 A, 60 W, 3 MHz, TO3

SKU

5607

Manufacturer / Model

TESLA / KD367B-100

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