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Transistor KP302B N-FET, 20 V, 40 mA, 300 mW, TO18

Transistor KP302B N-FET, 20 V, 40 mA, 300 mW, TO18

Transistor KP302B N-FET, 20 V, 40 mA, 300 mW, TO18

Model:

КП302Е

Weight:

0.003 Kgs

Availability

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€ 0.46 / 0.90 лв

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SKU: 4997

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Specifications

Technical parameters of Transistor KP302B N-FET, 20 V, 40 mA, 300 mW, TO18

Transistor type:

N-channel

Maximum voltage drain-source Uds:

20 [V]

Maximum drain current:

0.04 [A]

Operating temperature:

-65~100 [°C]

Power Pd:

0.3 [W]

Housing:

TO-18

Maximum voltage gate-source Ugs:

20 [V]

Model:

КП302Е

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor KP302B N-FET, 20 V, 40 mA, 300 mW, TO18

КП302 PDF, 220.62 KB

КП302 PDF, 448.64 KB

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Transistor KP302B N-FET, 20 V, 40 mA, 300 mW, TO18

SKU

4997

Model

КП302Е

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