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Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Transistor MJ11016G with operating temperature 200 ° C and collector current 30A.

Manufacturer:

ON SEMICONDUCTOR

Model:

MJ11016G

Weight:

0.022 Kgs

Availability

Available online

20 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

-18%

online

BGN 12.46 / 6.37 €

~~BGN 15.20~~

The offer is valid from 01.08.2025 to 01.08.2025

SKU: 5601

Specifications Files Reviews

Specifications

Technical parameters of Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Brand:

ON SEMICONDUCTOR

Transistor type:

NPN darlington

Maximum voltage collector-emitter Uceo:

120 [V]

Maximum collector current Ic:

30 [A]

Power Pc:

200 [W]

Housing:

TO-3

Mounting:

THT

Maximum voltage collector-base Ucbo:

120 [V]

Model:

MJ11016G

Operating temperature:

-55~200 [°C]

Files

Technical documentation of Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Technical data (EN) PDF, 143.41 KB

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