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Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Transistor MJ11016G with operating temperature 200 ° C and collector current 30A.

Manufacturer:

ON SEMICONDUCTOR

Model:

MJ11016G

Weight:

0.022 Kgs

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353 pcs.

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€ 8.50

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SKU: 5601

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Specifications

Technical parameters of Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Brand:

ON SEMICONDUCTOR

Transistor type:

NPN darlington

Maximum voltage collector-emitter Uceo:

120 [V]

Maximum collector current Ic:

30 [A]

Power Pc:

200 [W]

Housing:

TO-3

Mounting:

THT

Maximum voltage collector-base Ucbo:

120 [V]

Model:

MJ11016G

Operating temperature:

-55~200 [°C]

Files

Technical documentation of Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Technical data (EN) PDF, 143.41 KB

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Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

SKU

5601

Manufacturer / Model

ON SEMICONDUCTOR / MJ11016G

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