Free delivery with Speedy within Bulgaria for online orders over BGN 150Incl. VAT / up to 30 kg.

EN

Products

Your cart is empty

Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Transistor MJ11016G with operating temperature 200 ° C and collector current 30A.

Manufacturer:

ON SEMICONDUCTOR

Model:

MJ11016G

Weight:

0.022 Kgs

Availability

Available online

79 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

-15%

online

BGN 12.92 / 6.61 €

~~BGN 15.20~~

The offer is valid from 07.11.2025 to 07.11.2025

SKU: 5601

Specifications Files Reviews

Specifications

Technical parameters of Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Brand:

ON SEMICONDUCTOR

Transistor type:

NPN darlington

Maximum voltage collector-emitter Uceo:

120 [V]

Maximum collector current Ic:

30 [A]

Power Pc:

200 [W]

Housing:

TO-3

Mounting:

THT

Maximum voltage collector-base Ucbo:

120 [V]

Model:

MJ11016G

Operating temperature:

-55~200 [°C]

Files

Technical documentation of Transistor MJ11016G, NPN, 120 V, 30 A, 200 W, TO3

Technical data (EN) PDF, 143.41 KB

Reviews

In order to write a review or rate this product you must be a registered user.