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Transistor P217A, PNP, Ge, 60 V, 7.5 A, 30 W

Transistor P217A, PNP, Ge, 60 V, 7.5 A, 30 W

Transistor P217A, PNP, Ge, 60 V, 7.5 A, 30 W

Model:

П217А

Weight:

0.017 Kgs

Availability

Out of stock online

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out of stock

€ 0.62 / 1.21 лв

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SKU: 20038

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Specifications

Technical parameters of Transistor P217A, PNP, Ge, 60 V, 7.5 A, 30 W

Transistor type:

PNP

Maximum voltage collector-emitter Uceo:

60 [V]

Maximum collector current Ic:

7.5 [A]

Power Pc:

30 [W]

Housing:

C27

Mounting:

THT

Maximum voltage collector-base Ucbo:

60 [V]

Model:

П217А

Maximum operating frequency:

0.1 [MHz]

Operating temperature:

-60~85 [°C]

Files

Technical documentation of Transistor P217A, PNP, Ge, 60 V, 7.5 A, 30 W

П217А PDF, 226.5 KB

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Transistor P217A, PNP, Ge, 60 V, 7.5 A, 30 W

SKU

20038

Model

П217А

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