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Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220

Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220

Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220

Model:

40N10 /RFP40N10/

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

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52 pcs.

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-6%

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€ 2.09 / 4.09 лв

~~€ 2.22~~

The offer is valid from 12.06.2026 to 12.06.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 31857

Specifications Reviews

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Specifications

Technical parameters of Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

40 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.04 [ohm]

Power Pd:

150 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±30 [V]

Model:

40N10 /RFP40N10/

Mounting:

THT

Diode:

no

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Transistor 40N10 MOS-N-FET 100 V, 40 A, 0.04 Ohm, 160 W, TO220

SKU

31857

Model

40N10 /RFP40N10/

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