Type: Bipolar, NPN, Si
Collector-emitter voltage max: 60 V
Emitter-base voltage max: 5 V
Collector-base voltage max: 60 V
Continuous collector current max: 3 A
DC current gain: 40-320 (coll. current 1 A)
Maximal power, dissipating оn the collector-base transition at 25°C ambient temperature: 30 W
Transition frequency: 8 MHz
Operating temperature range: –55°C- 150°C
Corpus heat conductivity: 0.24 W/°C
Complementary to PNP-bipolar transistor 2SB507.
Application: in the output stages of 15W to 25W LF power amplifiers.