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Transistor MBQ40T65QES, IGBT, 650V, 40A, 115W, TO-247

Transistor MBQ40T65QES, IGBT, 650V, 40A, 115W, TO-247

IGBT transistor MBQ40T65QES with integrated diode collector-emitter voltage 650 V and collector current 40 A.

Model:

MBQ40T65QES

Weight:

0.003 Kgs

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for a total cart value over € 50

Availability

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288 pcs.

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out of stock

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€ 7.62 / 14.90 лв

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 17149

Specifications Files Reviews

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Specifications

Technical parameters of Transistor MBQ40T65QES, IGBT, 650V, 40A, 115W, TO-247

Transistor type:

IGBT

Maximum voltage collector-emitter Uceo:

650 [V]

Maximum collector current Ic:

80 [A]

Power:

115 [W]

Housing:

TO-247

Diode:

no

Mounting:

THT

Model:

MBQ40T65QES

Operating temperature:

-40~175 [°C]

Maximum collector current at 100°C:

40 [A]

Files

Technical documentation of Transistor MBQ40T65QES, IGBT, 650V, 40A, 115W, TO-247

Datasheet MBQ40T65QES (EN) PDF, 712.46 KB

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Transistor MBQ40T65QES, IGBT, 650V, 40A, 115W, TO-247

SKU

17149

Model

MBQ40T65QES

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