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Transistor MBQ40T65QES, N-IGBT+D, 650V, 40A, 349W, TO-247

Transistor MBQ40T65QES, N-IGBT+D, 650V, 40A, 349W, TO-247

N-channel IGBT transistor MBQ40T65QES with integrated diode collector-emitter voltage 650V and collector current 40A.

Model:

MBQ40T65QES

Weight:

0.003 Kgs

Availability

Out of stock online

On site in Vikiwat shop

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BGN 9.90 VAT Incl.

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SKU: 155063

Specifications Files Reviews

Specifications

Technical parameters of Transistor MBQ40T65QES, N-IGBT+D, 650V, 40A, 349W, TO-247

Transistor type:

N-IGBT

Maximum voltage collector-emitter Uceo:

650 [V]

Maximum collector current Ic:

80 [A]

Power:

349 [W]

Housing:

TO-247

Diode:

yes

Mounting:

THT

Model:

MBQ40T65QES

Operating temperature:

-40~175 [°C]

Maximum collector current at 100°C:

40 [A]

Files

Technical documentation of Transistor MBQ40T65QES, N-IGBT+D, 650V, 40A, 349W, TO-247

Datasheet (EN) PDF, 712.46 KB

Reviews

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