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Transistor 2N7002-7-F, MOS-N-FET, 60V, 0.21A, 7.5 Ohm, 0.3W, SOT23

Transistor 2N7002-7-F, MOS-N-FET, 60V, 0.21A, 7.5 Ohm, 0.3W, SOT23

Transistor 2N7002-7-F, MOS-N-FET, 60V, 0.21A, 7.5 Ohm, 0.3W, SOT23

Manufacturer:

DIODES INCORPORATED

Model:

2N7002-7-F

Weight:

0.001 Kgs

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for a total cart value over € 50

Availability

Available online

2144 pcs.

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out of stock

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Possible speedy APS

€ 0.12 / 0.23 лв

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 95308

Specifications Files Reviews

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Specifications

Technical parameters of Transistor 2N7002-7-F, MOS-N-FET, 60V, 0.21A, 7.5 Ohm, 0.3W, SOT23

Brand:

DIODES INCORPORATED

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

60 [V]

Maximum drain current:

0.115 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

7.5 [ohm]

Power Pd:

0.3 [W]

Housing:

SOT23

Maximum voltage gate-source Ugs:

±20 [V]

Model:

2N7002-7-F

Mounting:

SMD

Diode:

no

Files

Technical documentation of Transistor 2N7002-7-F, MOS-N-FET, 60V, 0.21A, 7.5 Ohm, 0.3W, SOT23

2N7002 PDF, 237.14 KB

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Transistor 2N7002-7-F, MOS-N-FET, 60V, 0.21A, 7.5 Ohm, 0.3W, SOT23

SKU

95308

Manufacturer / Model

DIODES INCORPORATED / 2N7002-7-F

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