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Transistor G12NA60A4, MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W

Name: Transistor G12NA60A4, MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W
SKU: 13395
Price: 8.30 BGN
Availability: OutOfStock
Rating: 4.0000 (1 reviews)

Transistor G12NA60A4 MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W

Model:

12NC60

Weight:

0.005 Kgs

Availability

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Vikiwat Store

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List Price	BGN 8.30	BGN 7.89	BGN 7.47	BGN 7.06

SKU: 13395

Specifications Files Reviews

Specifications

Technical parameters of Transistor G12NA60A4, MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

12 [A]

Operating temperature:

-65~150 [°C]

Drain-source resistance at 25°С:

0.55 [ohm]

Power Pd:

190 [W]

Housing:

TO-247

Maximum voltage gate-source Ugs:

±30 [V]

Model:

12NC60

Mounting:

THT

Diode:

Files

Technical documentation of Transistor G12NA60A4, MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W

Datasheet PDF, 207.12 KB

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