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Transistor G12NA60A4, MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W

Transistor G12NA60A4, MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W

Transistor G12NA60A4 MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W

Model:

12NC60

Weight:

0.006 Kgs

Availability

Out of stock online

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€ 4.24 / 8.29 лв

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SKU: 13395

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Specifications

Technical parameters of Transistor G12NA60A4, MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

12 [A]

Operating temperature:

-65~150 [°C]

Drain-source resistance at 25°С:

0.55 [ohm]

Power Pd:

190 [W]

Housing:

TO-247

Maximum voltage gate-source Ugs:

±30 [V]

Model:

12NC60

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor G12NA60A4, MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W

Datasheet PDF, 207.12 KB

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Transistor G12NA60A4, MOS-N-FET 600 V, 12 A, 0.6 Ohm, 190 W

SKU

13395

Model

12NC60

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