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Transistor 2SK1012 MOS-N-FET 500 V, 10 A, 100 W, 0.9 Ohm TO247

Transistor 2SK1012 MOS-N-FET 500 V, 10 A, 100 W, 0.9 Ohm TO247

Transistor 2SK1012 MOS-N-FET 500 V, 10 A, 100 W, 0.9 Ohm TO247

Model:

2SK1012

Weight:

0.011 Kgs

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for a total cart value over € 50

Availability

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5 pcs.

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-8%

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€ 1.79

~~€ 1.95~~

The offer is valid from 08.11.2026 to 08.11.2026

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for a total cart value over € 50

SKU: 4918

Specifications Reviews

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Specifications

Technical parameters of Transistor 2SK1012 MOS-N-FET 500 V, 10 A, 100 W, 0.9 Ohm TO247

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

500 [V]

Maximum drain current:

10 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.6 [ohm]

Power Pd:

100 [W]

Housing:

SC-65

Maximum voltage gate-source Ugs:

±30 [V]

Model:

2SK1012

Mounting:

THT

Diode:

yes

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Transistor 2SK1012 MOS-N-FET 500 V, 10 A, 100 W, 0.9 Ohm TO247

SKU

4918

Model

2SK1012

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