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Transistor IRF9540N MOS-P-FET 100 V, 23 A, 0.117 ohm, 140 W

Transistor IRF9540N MOS-P-FET 100 V, 23 A, 0.117 Ohm, 140 W

Transistor IRF9540N MOS-P-FET 100 V, 23 A, 0.117 ohm, 140 W

Manufacturer:

INFINEON

Model:

IRF9540

Weight:

0.006 Kgs

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Availability

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213 pcs.

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out of stock

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€ 1.99 / 3.89 лв

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for a total cart value over € 50

SKU: 4954

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Specifications

Technical parameters of Transistor IRF9540N MOS-P-FET 100 V, 23 A, 0.117 ohm, 140 W

Brand:

INFINEON

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

19 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.2 [ohm]

Power Pd:

150 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF9540

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF9540N MOS-P-FET 100 V, 23 A, 0.117 ohm, 140 W

Technical data (en) PDF, 130.2 KB

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Transistor IRF9540N MOS-P-FET 100 V, 23 A, 0.117 ohm, 140 W

SKU

4954

Manufacturer / Model

INFINEON / IRF9540

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