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Transistor 2SK1213 MOS-N-FET 600 V, 6 A, 125 W, TO-3P

Transistor 2SK1213 MOS-N-FET 600 V, 6 A, 125 W, TO-3P

Transistor 2SK1213 MOS-N-FET 600 V, 6 A, 125 W, TO-3P

Model:

2SK1213

Weight:

0.011 Kgs

Availability

Out of stock online

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out of stock

€ 4.55 / 8.90 лв

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SKU: 39052

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Specifications

Technical parameters of Transistor 2SK1213 MOS-N-FET 600 V, 6 A, 125 W, TO-3P

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

6 [A]

Operating temperature:

-65~200 [°C]

Drain-source resistance at 25°С:

1.25 [ohm]

Power Pd:

125 [W]

Housing:

TO-3P

Maximum voltage gate-source Ugs:

20 [mV]

Model:

2SK1213

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor 2SK1213 MOS-N-FET 600 V, 6 A, 125 W, TO-3P

2SK1213 PDF, 115.45 KB

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Transistor 2SK1213 MOS-N-FET 600 V, 6 A, 125 W, TO-3P

SKU

39052

Model

2SK1213

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