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Transistor 2SK1357 MOS-N-FET 900 V, 5 A, 125 W, 2.5 Ohm

Transistor 2SK1357 MOS-N-FET 900 V, 5 A, 125 W, 2.5 Ohm

Transistor 2SK1357 MOS-N-FET 900 V, 5 A, 125 W, 2.5 Ohm

Model:

2SK1357

Weight:

0.022 Kgs

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for a total cart value over € 50

Availability

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1 pcs.

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-5%

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€ 1.42 / 2.78 лв

~~€ 1.49~~

The offer is valid from 03.08.2026 to 03.08.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4909

Specifications Reviews

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Specifications

Technical parameters of Transistor 2SK1357 MOS-N-FET 900 V, 5 A, 125 W, 2.5 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

900 [V]

Maximum drain current:

5 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

2.5 [ohm]

Power Pd:

125 [W]

Housing:

TO-3P

Maximum voltage gate-source Ugs:

±30 [V]

Model:

2SK1357

Mounting:

THT

Diode:

yes

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Transistor 2SK1357 MOS-N-FET 900 V, 5 A, 125 W, 2.5 Ohm

SKU

4909

Model

2SK1357

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