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Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

Model:

2SK2850

Weight:

0.011 Kgs

Availability

Out of stock online

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BGN 11.90 VAT Incl.

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SKU: 38389

Specifications Files Reviews

Specifications

Technical parameters of Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

900 [V]

Maximum drain current:

6 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.87 [ohm]

Power Pd:

125 [W]

Housing:

TO-3P

Maximum voltage gate-source Ugs:

±30 [V]

Model:

2SK2850

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

2SK2850 PDF, 261.57 KB

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