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Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

Model:

2SK2850

Weight:

0.011 Kgs

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for a total cart value over € 50

Availability

Available online

1 pcs.

On site in Vikiwat shop

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out of stock

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Possible speedy APS

€ 4.87 / 9.52 лв

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 38389

Specifications Files Reviews

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Specifications

Technical parameters of Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

900 [V]

Maximum drain current:

6 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.87 [ohm]

Power Pd:

125 [W]

Housing:

TO-3P

Maximum voltage gate-source Ugs:

±30 [V]

Model:

2SK2850

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

2SK2850 PDF, 261.57 KB

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Transistor 2SK2850 MOS-N-FET 900 V, 6 A, 125 W, 1.87 Ohm

SKU

38389

Model

2SK2850

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