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Transistor 2SK2750 MOS-N-FET 600 V, 3.5 A, 35 W, 1.7 Ohm

Transistor 2SK2750 MOS-N-FET 600 V, 3.5 A, 35 W, 1.7 Ohm

Transistor 2SK2750 MOS-N-FET 600 V, 3.5 A, 35 W, 1.7 Ohm

Model:

2SK2750

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

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8 pcs.

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-7%

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€ 2.28 / 4.46 лв

~~€ 2.45~~

The offer is valid from 29.07.2026 to 29.07.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4963

Specifications Files Reviews

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Specifications

Technical parameters of Transistor 2SK2750 MOS-N-FET 600 V, 3.5 A, 35 W, 1.7 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

3.5 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.7 [ohm]

Power Pd:

35 [W]

Housing:

TO-220F

Maximum voltage gate-source Ugs:

±30 [V]

Model:

2SK2750

Mounting:

THT

Diode:

diode and zener diode

Files

Technical documentation of Transistor 2SK2750 MOS-N-FET 600 V, 3.5 A, 35 W, 1.7 Ohm

2SK2750 PDF, 656.74 KB

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Transistor 2SK2750 MOS-N-FET 600 V, 3.5 A, 35 W, 1.7 Ohm

SKU

4963

Model

2SK2750

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