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Transistor 2SK3114, MOS-N-FET, 600 V, 4 A, 30 W, 1.6 Ohm

Transistor 2SK3114, MOS-N-FET, 600 V, 4 A, 30 W, 1.6 Ohm

Transistor 2SK3114, MOS-N-FET, 600 V, 4 A, 30 W, 1.6 Ohm

Model:

2SK3114

Weight:

0.011 Kgs

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Availability

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7 pcs.

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-6%

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€ 2.45 / 4.79 лв

~~€ 2.61~~

The offer is valid from 11.06.2026 to 11.06.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 39873

Specifications Files Reviews

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Specifications

Technical parameters of Transistor 2SK3114, MOS-N-FET, 600 V, 4 A, 30 W, 1.6 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

4 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.6 [ohm]

Power Pd:

30 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

. [V]

Model:

2SK3114

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor 2SK3114, MOS-N-FET, 600 V, 4 A, 30 W, 1.6 Ohm

2SK3114 PDF, 93.24 KB

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Transistor 2SK3114, MOS-N-FET, 600 V, 4 A, 30 W, 1.6 Ohm

SKU

39873

Model

2SK3114

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