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Transistor IRLB4030PBF, MOS-N-FET, 100V, 180A, 4.3 ohm, TO220AB

Transistor IRLB4030PBF, MOS-N-FET, 100V, 180A, 4.3Ohm, TO220AB

Transistor IRLB4030PBF, MOS-N-FET, 100V, 180A, 4.3 ohm, TO220AB, for THT mounting.

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRLB4030

Weight:

0.006 Kgs

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Availability

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157 pcs.

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€ 4.28 / 8.37 лв

~~€ 4.60~~

The offer is valid from 20.07.2026 to 20.07.2026

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for a total cart value over € 50

SKU: 7023

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Specifications

Technical parameters of Transistor IRLB4030PBF, MOS-N-FET, 100V, 180A, 4.3 ohm, TO220AB

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

180 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

3.4 [ohm]

Power Pd:

370 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±16 [V]

Model:

IRLB4030

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor IRLB4030PBF, MOS-N-FET, 100V, 180A, 4.3 ohm, TO220AB

IRLB4030PBF PDF, 276.96 KB

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Transistor IRLB4030PBF, MOS-N-FET, 100V, 180A, 4.3 ohm, TO220AB

SKU

7023

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRLB4030

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