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Transistor 2SK817 MOS-N-FET 60 V, 26 A, 35 W, 0.04 Ohm

Transistor 2SK817 MOS-N-FET 60 V, 26 A, 35 W, 0.04 Ohm

Transistor 2SK817 MOS-N-FET 60 V, 26 A, 35 W, 0.04 Ohm

Model:

2SK817

Weight:

0.011 Kgs

Availability

Out of stock online

On site in Vikiwat shop

the price on site may be different

2 pcs.

€ 1.48 / 2.89 лв

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SKU: 4984

Specifications Files Reviews

Specifications

Technical parameters of Transistor 2SK817 MOS-N-FET 60 V, 26 A, 35 W, 0.04 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

60 [V]

Maximum drain current:

26 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.04 [ohm]

Power Pd:

35 [W]

Housing:

TO-220F

Maximum voltage gate-source Ugs:

±20 [V]

Model:

2SK817

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor 2SK817 MOS-N-FET 60 V, 26 A, 35 W, 0.04 Ohm

2SK817 PDF, 176.97 KB

Reviews

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