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Transistor IRFZ34N MOS-N-FET 55 V, 26 A, 0.04 Ohm, 56 W

Transistor IRFZ34N MOS-N-FET 55 V, 26 A, 0.04 Ohm, 56 W

Transistor IRFZ34N MOS-N-FET 55 V, 26 A, 0.04 Ohm, 56 W

Model:

IRFZ34N

Weight:

0.011 Kgs

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for a total cart value over € 50

Availability

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653 pcs.

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€ 1.78

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SKU: 4895

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRFZ34N MOS-N-FET 55 V, 26 A, 0.04 Ohm, 56 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

55 [V]

Maximum drain current:

26 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.04 [ohm]

Power Pd:

56 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFZ34N

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFZ34N MOS-N-FET 55 V, 26 A, 0.04 Ohm, 56 W

IRFZ34N PDF, 198.25 KB

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Transistor IRFZ34N MOS-N-FET 55 V, 26 A, 0.04 Ohm, 56 W

SKU

4895

Model

IRFZ34N

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