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Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220

Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220

Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220.

Manufacturer:

ON SEMICONDUCTOR

Model:

50N06 /FQP/

Weight:

0.003 Kgs

Availability

Delivery within 10 days

318 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

Expected delivery of 26 pcs.

on sale after 07.04

See quantities

€ 2.17 / 4.24 лв

SKU: 13398

Specifications Files Reviews

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Specifications

Technical parameters of Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220

Brand:

ON SEMICONDUCTOR

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

60 [V]

Maximum drain current:

50 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.018 [ohm]

Power Pd:

131 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

50N06 /FQP/

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220

Technical data [EN] PDF, 375.54 KB

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Transistor 50N06 MOS-N-FET 60 V, 50 A, 0.022 Ohm,120 W, TO220

SKU

13398

Manufacturer / Model

ON SEMICONDUCTOR / 50N06 /FQP/

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