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Transistor ZXMN6A11ZTA, MOS-N-FET, 60V, 3.6A, 0.12 Ohm, 1.5W, SOT89

Transistor ZXMN6A11ZTA, MOS-N-FET, 60V, 3.6A, 0.12 Ohm, 1.5W, SOT89

Transistor ZXMN6A11ZTA, MOS-N-FET, 60V, 3.6A, 0.12 Ohm, 1.5W, SOT89

Manufacturer:

DIODES INCORPORATED

Model:

ZXMN6AZTA

Weight:

0.001 Kgs

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for a total cart value over € 50

Availability

Available online

555 pcs.

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-70%

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€ 0.27 / 0.53 лв

~~€ 0.90~~

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for a total cart value over € 50

SKU: 95311

Specifications Files Reviews

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Specifications

Technical parameters of Transistor ZXMN6A11ZTA, MOS-N-FET, 60V, 3.6A, 0.12 Ohm, 1.5W, SOT89

Brand:

DIODES INCORPORATED

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

60 [V]

Maximum drain current:

3.6 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.12 [ohm]

Power Pd:

1.5 [W]

Housing:

SOT89

Maximum voltage gate-source Ugs:

±20 [V]

Model:

ZXMN6AZTA

Mounting:

SMD

Diode:

yes

Files

Technical documentation of Transistor ZXMN6A11ZTA, MOS-N-FET, 60V, 3.6A, 0.12 Ohm, 1.5W, SOT89

ZXMN6A11ZTA PDF, 587.81 KB

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Transistor ZXMN6A11ZTA, MOS-N-FET, 60V, 3.6A, 0.12 Ohm, 1.5W, SOT89

SKU

95311

Manufacturer / Model

DIODES INCORPORATED / ZXMN6AZTA

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