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Transistor 8N60 MOS-N-FET 600 V, 8 A, 2.3 Ohm, 150 W, TO247

Transistor 8N60 MOS-N-FET 600 V, 8 A, 2.3 Ohm, 150 W, TO247

Transistor 8N60 MOS-N-FET 600 V, 8 A, 2.3 Ohm, 150 W, TO247

Model:

8N60 /SSH8N60/

Weight:

0.011 Kgs

Availability

Out of stock online

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out of stock

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€ 4.25 / 8.31 лв

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SKU: 4991

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Specifications

Technical parameters of Transistor 8N60 MOS-N-FET 600 V, 8 A, 2.3 Ohm, 150 W, TO247

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

8 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.55 [ohm]

Power Pd:

180 [W]

Housing:

TO-247

Maximum voltage gate-source Ugs:

±20 [V]

Model:

8N60 /SSH8N60/

Mounting:

THT

Diode:

no

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Transistor 8N60 MOS-N-FET 600 V, 8 A, 2.3 Ohm, 150 W, TO247

SKU

4991

Model

8N60 /SSH8N60/

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