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Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

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Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

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Price: 1.12лв. VAT Incl.

The offer is valid while stocks last

List Price: ~~1.60лв.~~ VAT Incl.

Discount: 0.48лв. VAT Incl. (30.00%)

Weight: 0.003 Kgs

Quantity: 39

SKU: 4920

Model: 2SK1117
Transistor polarity: N-channel
Drain-source breakdown voltage: 600 V
Gate-source breakdown voltage: ±20 V
Drain-source resistance/25°C: 0.95 Ohm
Forward transconductance: 4 S
Continuous drain current/25°C: 6 A
Input capacitance: 1400 pF
Gate charge: 56 nC
Power: 100 W
Case: TO-220AB

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

6 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.95 [ohm]

Power Pd:

100 [W]

Body:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

2SK1117

Mounting:

THT

Diode:

yes

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