Free delivery with Speedy within Bulgaria over € 75 / up to 30 kg.

EN

Products

Your cart is empty

Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

Model:

2SK1117

Weight:

0.003 Kgs

Availability

Available online

6 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

€ 1.72 / 3.36 лв

SKU: 4920

Specifications Reviews

Report an error

Specifications

Technical parameters of Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

6 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.95 [ohm]

Power Pd:

100 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

2SK1117

Mounting:

THT

Diode:

yes

Reviews

In order to write a review or rate this product you must be a registered user.

Thank you for helping us improve your user experience on our site.

Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

SKU

4920

Model

2SK1117

Please indicate the error you encountered.

Technical characteristics

Product description

Product image

Technical documentation (files)

Other

Your comment Your email address *

Antispam verification:

Recently viewed products

Power adapter 24VDC, 1.67A, 40W, 90~264VAC, 127~370VDC, impulse, GST40A24-P1J

Desktop Power Supply 12V, switched-mode type, SYS1546-3612-T3

Delete recently viewed