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Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

Model:

2SK1117

Weight:

0.003 Kgs

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for a total cart value over € 50

Availability

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6 pcs.

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-9%

online

€ 1.57 / 3.07 лв

~~€ 1.72~~

The offer is valid from 09.04.2026 to 09.04.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4920

Specifications Reviews

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Specifications

Technical parameters of Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

6 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.95 [ohm]

Power Pd:

100 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

2SK1117

Mounting:

THT

Diode:

yes

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Transistor 2SK1117 MOS-N-FET 600 V, 6 A, 100 W, 0.95 Ohm TO220AB

SKU

4920

Model

2SK1117

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