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Transistor BF960 MOS-N-FET 20 V, 30 mA, 200 mW, 900 MHz, dual gate

Name: Transistor BF960 MOS-N-FET 20 V, 30 mA, 200 mW, 900 MHz, dual gate
SKU: 4933
Price: 1.50 BGN
Availability: InStock
Rating: 5.0000 (1 reviews)

Model:

BF960

Weight:

0.015 Kgs

Availability

Qty

Delivery time

In Stock

48 h

Vikiwat Store

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In stock

BGN 1.50 VAT Incl.

SKU: 4933

Specifications Files Reviews

Specifications

Technical parameters of Transistor BF960 MOS-N-FET 20 V, 30 mA, 200 mW, 900 MHz, dual gate

Transistor type:

N-Dual Gate-MOSFET

Maximum voltage drain-source Uds:

20 [V]

Maximum drain current:

0.03 [A]

Operating temperature:

-55~150 [°C]

Power Pd:

0.2 [W]

Housing:

TO-50

Maximum voltage gate-source Ugs:

20 [V]

Model:

BF960

Mounting:

THT

Diode:

Files

Technical documentation of Transistor BF960 MOS-N-FET 20 V, 30 mA, 200 mW, 900 MHz, dual gate

BF960 PDF, 570.49 KB

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