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Transistor BUK456-1000 MOS-N-FET 1000V, 3.1 A, 125 W, 5 ohm

Transistor BUK456-1000 MOS-N-FET 1000V, 3.1 A, 125 W, 5 Ohm

Transistor BUK456-1000 MOS-N-FET 1000V, 3.1 A, 125 W, 5 ohm.

Manufacturer:

INFINEON

Model:

BUK456-1000

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

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890 pcs.

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-25%

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€ 1.20 / 2.35 лв

~~€ 1.60~~

The offer is valid from 19.04.2026 to 19.05.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4930

Specifications Files Reviews

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Specifications

Technical parameters of Transistor BUK456-1000 MOS-N-FET 1000V, 3.1 A, 125 W, 5 ohm

Brand:

INFINEON

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

1000 [V]

Maximum drain current:

3.1 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

5 [ohm]

Power Pd:

125 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±30 [V]

Model:

BUK456-1000

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor BUK456-1000 MOS-N-FET 1000V, 3.1 A, 125 W, 5 ohm

Technical data EN PDF, 65.01 KB

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Transistor BUK456-1000 MOS-N-FET 1000V, 3.1 A, 125 W, 5 ohm

SKU

4930

Manufacturer / Model

INFINEON / BUK456-1000

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