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Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

Manufacturer:

VISHAY

Model:

IRF620

Weight:

0.002 Kgs

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for a total cart value over € 50

Availability

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33 pcs.

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-10%

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€ 1.06 / 2.07 лв

~~€ 1.18~~

The offer is valid from 13.05.2026 to 13.05.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4957

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

Brand:

VISHAY

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

3.3 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.8 [ohm]

Power Pd:

50 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

20 [V]

Model:

IRF620

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

IRF620PBF PDF, 157.59 KB

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Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

SKU

4957

Manufacturer / Model

VISHAY / IRF620

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