Free delivery with Speedy within Bulgaria for online orders over BGN 150Incl. VAT / up to 30 kg.

EN

Products

Your cart is empty

Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

Manufacturer:

VISHAY

Model:

IRF620

Weight:

0.002 Kgs

Availability

Available online

596 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

BGN 2.30 / 1.18 €

SKU: 4957

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

Brand:

VISHAY

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

3.3 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.8 [ohm]

Power Pd:

50 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

20 [V]

Model:

IRF620

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF620PBF MOS-N-FET 200 V, 5.2 A, 50 W, 0.8 Ohm, TO220

IRF620PBF PDF, 157.59 KB

Reviews

In order to write a review or rate this product you must be a registered user.