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Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Manufacturer:

ON SEMICONDUCTOR

Model:

BUZ11

Weight:

0.006 Kgs

Availability

Available online

1387 pcs.

On site in Vikiwat shop

the price on site may be different

18 pcs.

See quantities

BGN 3.92 VAT Incl.

Prices for quantities (VAT Incl.)

1+

BGN 3.92

3+

BGN 3.53

5+

BGN 3.33

10+

BGN 2.94

25+

BGN 2.55

SKU: 4865

Specifications Files Reviews

Specifications

Technical parameters of Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Brand:

ON SEMICONDUCTOR

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

50 [V]

Maximum drain current:

33 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.04 [ohm]

Power Pd:

90 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

BUZ11

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

BUZ11 PDF, 82.73 KB

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