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Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Manufacturer:

ON SEMICONDUCTOR

Model:

BUZ11

Weight:

0.006 Kgs

Availability

Available online

1010 pcs.

On site in Vikiwat shop

the price on site may be different

18 pcs.

See quantities

€ 2.00 / 3.91 лв

SKU: 4865

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Specifications

Technical parameters of Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Brand:

ON SEMICONDUCTOR

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

50 [V]

Maximum drain current:

33 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.04 [ohm]

Power Pd:

90 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

BUZ11

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

BUZ11 PDF, 82.73 KB

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Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

SKU

4865

Manufacturer / Model

ON SEMICONDUCTOR / BUZ11

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