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Transistor IRFP150 MOS-N-FET 100 V, 40 A, 0.055 Оhm, 180 W TO247

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Transistor IRFP150 MOS-N-FET 100 V, 40 A, 0.055 Оhm, 180 W TO247

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Manufacturer: INTERNATIONAL RECTIFIER

Price: BGN 3.50 VAT Incl.

Quantity	1+	3+	5+	10+
List Price	BGN 3.50 VAT Incl.	BGN 3.15 VAT Incl.	BGN 2.9691 VAT Incl.	BGN 2.80 VAT Incl.

Weight: 0.005 Kgs

Quantity: 203

SKU: 13391

Model: IRFP150
Transistor polarity: N-channel
Drain-source breakdown voltage: 100 V
Gate-source breakdown voltage: ±20 V
Drain-source resistance/25°C: 0.055 Ohm
Forward transconductance: 20 S
Continuous drain current/25°C: 40 A
Input capacitance: 2000 pF
Gate charge: 70 nC
Power: 180 W
Case: TO-247

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

39 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.036 [ohm]

Power Pd:

140 [W]

Housing:

TO-247AC

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFP150NPBF

Mounting:

THT

Diode:

yes

IRFP150NPBF PDF, 1.01 MB