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Transistor BUZ54A MOS-N-FET 1000 V, 4.5 A, 125 W, 2.6 Ohm

Transistor BUZ54A MOS-N-FET 1000 V, 4.5 A, 125 W, 2.6 Ohm

Transistor BUZ54A MOS-N-FET 1000 V, 4.5 A, 125 W, 2.6 Ohm

Model:

BUZ54

Weight:

0.020 Kgs

Availability

Available online

2 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

BGN 9.52 VAT Incl.

Prices for quantities (VAT Incl.)

1+

BGN 9.52

3+

BGN 9.04

5+

BGN 8.57

SKU: 4866

Specifications Files Reviews

Specifications

Technical parameters of Transistor BUZ54A MOS-N-FET 1000 V, 4.5 A, 125 W, 2.6 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

1000 [V]

Maximum drain current:

4.5 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

2.6 [ohm]

Power Pd:

125 [W]

Housing:

TO-3

Maximum voltage gate-source Ugs:

±20 [V]

Model:

BUZ54

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor BUZ54A MOS-N-FET 1000 V, 4.5 A, 125 W, 2.6 Ohm

BUZ54A PDF, 215.83 KB

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