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Transistor RFM15N12, Filed-Effect+D, 120V, 15A, 75W, TO3

Transistor RFM15N12, Filed-Effect+D, 120V, 15A, 75W, TO3

Transistor RFM15N12, Filed-Effect+D, 120V, 15A, 75W, TO3

Model:

15N12 /RFM15N12/

Weight:

0.022 Kgs

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Availability

Available online

12 pcs.

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-6%

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€ 3.23 / 6.32 лв

~~€ 3.44~~

The offer is valid from 03.06.2026 to 03.06.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 5667

Specifications Files Reviews

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Specifications

Technical parameters of Transistor RFM15N12, Filed-Effect+D, 120V, 15A, 75W, TO3

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

120 [V]

Maximum drain current:

15 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.15 [ohm]

Power Pd:

100 [W]

Housing:

TO-3

Maximum voltage gate-source Ugs:

±20 [V]

Model:

15N12 /RFM15N12/

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor RFM15N12, Filed-Effect+D, 120V, 15A, 75W, TO3

RFM15N12 PDF, 238.4 KB

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Transistor RFM15N12, Filed-Effect+D, 120V, 15A, 75W, TO3

SKU

5667

Model

15N12 /RFM15N12/

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