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Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRF1010

Weight:

0.006 Kgs

Availability

Available online

210 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

-9%

online

BGN 3.57 / 1.83 €

~~BGN 3.92~~

The offer is valid from 29.08.2025 to 29.08.2025

SKU: 19417

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

60 [V]

Maximum drain current:

81 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.012 [ohm]

Power Pd:

140 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF1010

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

IRF1010EPBF PDF, 199.6 KB

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