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Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRF1010

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

Available online

340 pcs.

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€ 1.86 / 3.64 лв

~~€ 2.00~~

The offer is valid from 25.07.2026 to 25.07.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 19417

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Specifications

Technical parameters of Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

60 [V]

Maximum drain current:

81 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.012 [ohm]

Power Pd:

140 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF1010

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

IRF1010EPBF PDF, 199.6 KB

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Transistor IRF1010EPBF, MOS-N-FET, 60V, 84A, 200W, TO220

SKU

19417

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRF1010

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