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Transistor IRF820PBF MOS-N-FET 500 V, 2.5 A, 3 Оhm, 50 W

Name: Transistor IRF820PBF MOS-N-FET 500 V, 2.5 A, 3 Оhm, 50 W
Brand: VISHAY
SKU: 4949
Price: 3.60 BGN
Availability: InStock
Rating: 4.0000 (1 reviews)

Manufacturer:

VISHAY

Model:

IRF820

Weight:

0.002 Kgs

Availability

Available online

5 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

BGN 3.60 VAT Incl.

Prices for quantities (VAT Incl.)

BGN 3.60

BGN 3.24

BGN 3.06

10+

BGN 2.88

25+

BGN 2.70

SKU: 4949

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF820PBF MOS-N-FET 500 V, 2.5 A, 3 Оhm, 50 W

Brand:

VISHAY

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

500 [V]

Maximum drain current:

2.5 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

3 [ohm]

Power Pd:

50 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF820

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF820PBF MOS-N-FET 500 V, 2.5 A, 3 Оhm, 50 W

IRF820PBF PDF, 152.67 KB

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