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Transistor IRF820PBF MOS-N-FET 500 V, 2.5 A, 3 Оhm, 50 W

Transistor IRF820PBF MOS-N-FET 500 V, 2.5 A, 3 Оhm, 50 W

Transistor IRF820PBF MOS-N-FET 500 V, 2.5 A, 3 Оhm, 50 W

Manufacturer:

VISHAY

Model:

IRF820

Weight:

0.002 Kgs

Availability

Out of stock online

On site in Vikiwat shop

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out of stock

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€ 1.84

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SKU: 4949

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Specifications

Technical parameters of Transistor IRF820PBF MOS-N-FET 500 V, 2.5 A, 3 Оhm, 50 W

Brand:

VISHAY

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

500 [V]

Maximum drain current:

2.5 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

3 [ohm]

Power Pd:

50 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF820

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF820PBF MOS-N-FET 500 V, 2.5 A, 3 Оhm, 50 W

IRF820PBF PDF, 152.67 KB

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Transistor IRF820PBF MOS-N-FET 500 V, 2.5 A, 3 Оhm, 50 W

SKU

4949

Manufacturer / Model

VISHAY / IRF820

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