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Transistor 2SJ306 MOS-P-FET 250V, 12A, 25 W, TO220MD

Transistor 2SJ306 MOS-P-FET 250 V, 12 A, 25 W, TO220MD

Transistor 2SJ306 MOS-P-FET with power 25 W and case TO-220ML.

Model:

2SJ306

Weight:

0.003 Kgs

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Availability

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129 pcs.

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-5%

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€ 1.86 / 3.64 лв

~~€ 1.96~~

The offer is valid from 03.08.2026 to 03.08.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 13382

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Specifications

Technical parameters of Transistor 2SJ306 MOS-P-FET 250V, 12A, 25 W, TO220MD

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

250 [V]

Maximum drain current:

12 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

2 [ohm]

Power Pd:

25 [W]

Housing:

TO-220ML

Maximum voltage gate-source Ugs:

±30 [V]

Model:

2SJ306

Mounting:

THT

Diode:

diode and zener diode

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Transistor 2SJ306 MOS-P-FET 250V, 12A, 25 W, TO220MD

SKU

13382

Model

2SJ306

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