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Transistor IRF840 MOS-N-FET 500V, 8 A, 0.85 ohm, 125 W

Transistor IRF840 MOS-N-FET 500V, 8 A, 0.85 Ohm, 125 W

Transistor IRF840 MOS-N-FET 500V, 8 A, 0.85 Ohm, 125 W.

Manufacturer:

VISHAY

Model:

IRF840

Weight:

0.006 Kgs

Availability

Available online

2017 pcs.

On site in Vikiwat shop

the price on site may be different

45 pcs.

See quantities

-12%

online

BGN 3.43 / 1.75 €

~~BGN 3.90~~

The offer is valid from 26.12.2025 to 26.12.2025

SKU: 4884

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF840 MOS-N-FET 500V, 8 A, 0.85 ohm, 125 W

Brand:

VISHAY

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

500 [V]

Maximum drain current:

8 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.85 [ohm]

Power Pd:

125 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF840

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF840 MOS-N-FET 500V, 8 A, 0.85 ohm, 125 W

tranzistor-irf840-mos-n-fet-500v-8a-0-85ohm-125w PDF, 281.89 KB

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