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Transistor IRFP064N, MOS-N-FET, 55V, 110A, 8 mOhm, 200W

Transistor IRFP064NPBF, MOS-N-FET, 55V, 110A, 8 mOhm, 200W

Transistor IRFP064N, MOS-N-FET, 55V, 110A, 8 mOhm, 200W

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRFP064N

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

Available online

767 pcs.

On site in Vikiwat shop

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6 pcs.

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-7%

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€ 4.64 / 9.08 лв

~~€ 4.99~~

The offer is valid from 07.06.2026 to 07.06.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 15813

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRFP064N, MOS-N-FET, 55V, 110A, 8 mOhm, 200W

Brand:

INFINEON

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

55 [V]

Maximum drain current:

110 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.008 [ohm]

Power Pd:

200 [W]

Housing:

TO-247AC

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFP064N

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFP064N, MOS-N-FET, 55V, 110A, 8 mOhm, 200W

Datasheet (EN) PDF, 112.68 KB

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Transistor IRFP064N, MOS-N-FET, 55V, 110A, 8 mOhm, 200W

SKU

15813

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRFP064N

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