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Transistor IRF9530NPBF MOS-P-FEТ 100V, 14A, 0.2ohm, 79W, TO220

Transistor IRF9530NPBF MOS-P-FEТ 100V, 14A, 0.2ohm, 79W, TO220

Transistor IRF9530NPBF MOS-P-FEТ 100 V, 14 A, 0.2 Ohm, 79 W

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRF9530

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

Available online

2191 pcs.

On site in Vikiwat shop

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10 pcs.

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-7%

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€ 2.33 / 4.56 лв

~~€ 2.51~~

The offer is valid from 20.07.2026 to 20.07.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4952

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRF9530NPBF MOS-P-FEТ 100V, 14A, 0.2ohm, 79W, TO220

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

14 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.2 [ohm]

Power Pd:

79 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF9530

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF9530NPBF MOS-P-FEТ 100V, 14A, 0.2ohm, 79W, TO220

IRF9530N PDF, 114.88 KB

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Transistor IRF9530NPBF MOS-P-FEТ 100V, 14A, 0.2ohm, 79W, TO220

SKU

4952

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRF9530

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