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Transistor IRF9640PBF, P-MOSFET, 0.5ohm, -200V, -6.8A, -55~150°C, 125W, TO220AB, ±20V

Transistor IRF9640PBF P-MOSFET 0.5ohm -200V -6.8A 125W ±20V

IRF9640PBF unipolar transistor type P-MOSFET with drain voltage -200 V, drain current -6.8A, 125W dissipated power and TO220AB housing.

Manufacturer:

VISHAY

Model:

IRF9640PBF

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

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1517 pcs.

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Possible speedy APS

€ 2.23 / 4.36 лв

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4944

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRF9640PBF, P-MOSFET, 0.5ohm, -200V, -6.8A, -55~150°C, 125W, TO220AB, ±20V

Brand:

VISHAY

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

-200 [V]

Maximum drain current:

-6.8 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.5 [ohm]

Power Pd:

125 [W]

Housing:

TO220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF9640PBF

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor IRF9640PBF, P-MOSFET, 0.5ohm, -200V, -6.8A, -55~150°C, 125W, TO220AB, ±20V

Datasheet IRF9640PBF (EN) PDF, 147.93 KB

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Transistor IRF9640PBF, P-MOSFET, 0.5ohm, -200V, -6.8A, -55~150°C, 125W, TO220AB, ±20V

SKU

4944

Manufacturer / Model

VISHAY / IRF9640PBF

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