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Transistor IRFBC40 MOS-N-FET 600 V, 6.2 A, 1.2 Оhm, 125 W, TO220AB

Transistor IRFBC40 MOS-N-FET 600 V, 6.2 A, 1.2 Оhm, 125 W, TO220AB

Transistor IRFBC40 MOS-N-FET 600 V, 6.2 A, 1.2 Оhm, 125 W, TO220AB

Manufacturer:

VISHAY

Model:

IRFBC40

Weight:

0.011 Kgs

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for a total cart value over € 50

Availability

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405 pcs.

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€ 1.89 / 3.70 лв

~~€ 1.99~~

The offer is valid from 03.08.2026 to 03.08.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4887

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Specifications

Technical parameters of Transistor IRFBC40 MOS-N-FET 600 V, 6.2 A, 1.2 Оhm, 125 W, TO220AB

Brand:

VISHAY

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

6.2 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.2 [ohm]

Power Pd:

125 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFBC40

Mounting:

THT

Diode:

yes

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Transistor IRFBC40 MOS-N-FET 600 V, 6.2 A, 1.2 Оhm, 125 W, TO220AB

SKU

4887

Manufacturer / Model

VISHAY / IRFBC40

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