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Transistor IRFP9140 MOS-P-FET 100 V, 19 A, 0.2 Ohm, 150 W

Transistor IRFP9140 MOS-P-FET 100 V, 19 A, 0.2 Ohm, 150 W

Transistor IRFP9140 MOS-P-FET 100 V, 19 A, 0.2 Ohm, 150 W

Model:

IRFP9140

Weight:

0.006 Kgs

Availability

Out of stock online

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out of stock

€ 1.60 / 3.13 лв

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SKU: 4885

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRFP9140 MOS-P-FET 100 V, 19 A, 0.2 Ohm, 150 W

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

21 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.117 [ohm]

Power Pd:

120 [W]

Housing:

TO-247

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFP9140

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFP9140 MOS-P-FET 100 V, 19 A, 0.2 Ohm, 150 W

IRFP9140 PDF, 63.03 KB

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Transistor IRFP9140 MOS-P-FET 100 V, 19 A, 0.2 Ohm, 150 W

SKU

4885

Model

IRFP9140

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